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AH225
1W High Linearity InGaP HBT Amplifier Applications

Repeaters Base Station Transceivers High Power Amplifiers Mobile Infrastructure LTE / WCDMA / CDMA / WiMAX
SOIC-8 Package
Product Features
400-2700 MHz 15.5 dB Gain at 2140 MHz +31 dBm P1dB +46 dBm Output IP3 300 mA Quiescent Current +5 V Single Supply MTTF > 100 Years Lead-free/RoHS-compliant SOIC-8 Package
Functional Block Diagram
General Description
The AH225 is a high dynamic range driver amplifier in a low-cost surface-mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband-tuned application circuits with up to +46 dBm OIP3 and +31.2 dBm of compressed 1dB power. The integrated active bias circuitry in the devices enables excellent stable linearity performance over temperature. It is housed in a lead-free/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH225 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. The AH225 is ideal for the final stage of small repeaters or as driver stages for high power amplifiers. In addition, the amplifier can be used for a wide variety of other applications within the 400 to 2700 MHz frequency band.
Pin Configuration
Pin #
1 2, 4, 5 3 6, 7 8 Backside Paddle
Symbol
Vbias N/C RF_in RF_Out Iref RF/DC GND
Ordering Information
Part No.
AH225-S8G AH225-S8PCB900 AH225-S8PCB1960 AH225-S8PCB2140
Description
1W High Linearity Amplifier 920-960 MHz Evaluation Board 1930-1960 MHz Evaluation Board 2110-2170 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7" reel. Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc. - 1 of 21 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)
AH225
1W High Linearity InGaP HBT Amplifier Specifications Absolute Maximum Ratings
Parameter
Storage Temperature RF Input Power, CW, 50, T=25C Device Voltage,Vcc, Vbias Device Current Device Power -65 to 150 C +26 dBm +8 V 900 mA +5 W
Recommended Operating Conditions
Parameter
Vcc Icq Tcase TJ (for >106 hours MTTF)
Rating
Min
+4.5 -40
Typ
+5 300
Max Units
+5.25 +85 +200 V mA C C
Operation of this device outside the parameter ranges given above may cause permanent damage.
Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25C, in a tuned application circuit.
Parameter
Operational Frequency Range Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 WCDMA Channel Power at -50 dBc ACLR Noise Figure Vcc, Vbias Quiescent Current, Icq Iref Thermal Resistance (jnc. to case) jc
Conditions
Min
400
Typical
2140 15.5 18 9.4 +31.2 +46 +21.3 6 +5 300 15
Max
2700
Units
MHz MHz dB dB dB dBm dBm dBm dB V mA mA C/W
See Note 1 See Note 2
See Note 3
35
Notes: 1. 3OIP measured with two tones at an output power of +19 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone. 2. 3GPP WCDMA, 164DPCH, 5 MHz, no clipping, PAR = 10.2 dB at 0.01% Probability. 3. This corresponds to the quiescent collector current or operating current under small-signal conditions into pins 6 and 7.
Performance Summary Table
Test conditions unless otherwise noted: Vcc = +5 V, Icq = 300 mA, T = +25 C, in an application circuit tuned for each frequency.
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 [See note 4] WCDMA Channel Power at -50 dBc ACLR
750
20.1 14.5 7 +30.4 +45 +21.2
940
19.8 10.5 8.4 +31 +47.3 +21.7
1500
17 17.2 11 +31.3 +48 +22
1840
15.1 11 10.7 +30.7 +46 +21.6
1960
15.4 15.4 8.3 +31.3 +53.6 +21.7
2140
15.2 18 9.4 +31 +47 +21.4
2600 MHz
13.2 19.4 5.5 +30.5 +48.7 +21.3 dB dB dB dBm dBm dBm
Notes: 4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for 940 MHz and 19 dBm/tone for 1490, 1840, 1960, 2140, 2600 MHz application circuits respectively. Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc. - 2 of 21 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)
AH225
1W High Linearity InGaP HBT Amplifier Device Characterization Data
Gain and Max Stable Gain
45 40 35 30
Gain (dB) MSG (dB) De-embedded S-Parameters
Input Smith Chart
1
Output Smith Chart
1 0.8
4GHz
0.8 0.6
0.6
Gain (dB)
0.4
4GHz
0.4
25
0.2
20 15 10 5 0 0 0.5 1 1.5 2 Frequency (MHz) 2.5 3
-0.75
0.2
0
0
0.05 GHz
-0.5
-0.25
-0.2 -0.4
0
0.25
0.5
0.75
-1
-0.75
-0.5
-0.25
-0.2 -0.4
0
0.25
0.5 0.75 0.05 GHz1
-0.6
-0.6
-0.8
-0.8
-1
Note: The gain for the unmatched device in 50 ohm system is shown as the trace in blue color, Gain (dB). For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the red line, DB [MSG]. The impedance loss plots are shown from 0.05-4 GHz.
S-Parameter Data
Vcc = +5 V, Icq = 300 mA, T = +25C, unmatched 50 ohm system, calibrated to device leads
Freq (MHz)
50 100 200 400 800 1000 1200 1400 1800 2100 2000 2200 2400 2600 2800 3000
S11 (dB)
-2.90 -1.57 -0.99 -0.81 -0.97 -1.12 -1.25 -1.53 -2.52 -4.69 -3.69 -6.45 -13.76 -10.27 -4.15 -1.93
S11 (ang)
-165.27 -171.34 179.84 169.25 152.64 145.10 136.77 128.95 110.16 91.38 98.77 86.18 87.27 171.20 159.31 143.93
S21 (dB)
32.12 28.59 23.57 17.96 12.56 11.02 10.01 9.29 8.93 9.54 9.27 9.79 10.01 8.85 6.56 3.19
S21 (ang)
136.60 116.71 100.17 86.66 69.77 62.27 54.20 46.48 27.07 5.44 13.27 -4.317 -28.04 -57.83 -84.16 -104.79
S12 (dB)
-40.91 -38.86 -37.78 -37.58 -36.47 -36.53 -35.91 -35.54 -34.79 -33.84 -34.06 -33.35 -33.51 -34.02 -35.29 -34.70
S12 (ang)
46.68 31.54 17.25 7.00 -0.03 -6.84 -8.53 -14.78 -32.76 -58.32 -50.56 -72.56 -107.65 -157.07 156.89 116.80
S22 (dB)
-0.94 -1.66 -1.95 -2.15 -2.08 -2.19 -2.20 -2.19 -2.20 -1.92 -2.01 -1.80 -1.25 -0.81 -0.78 -0.99
S22 (ang)
-74.85 -113.38 -143.44 -162.82 -173.99 -175.67 -177.71 -178.63 -179.60 -179.47 179.89 179.99 179.43 175.18 171.95 167.43
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 3 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Reference Design 700-850 MHz
C9
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15.
Notes: See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R7 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of C6 is placed at 70 mils from the edge of AH225 RFout pin (3 at 750 MHz). C5 is placed against the edge of C6. The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin (0.5 at 750 MHz). C8 is placed against the edge of R5, L2 against C8 and C9 against L2. Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. Inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 700-850 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 20 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] OFDMA Channel Power at 2.5% EVM [2] Supply Voltage, Vcc Quiescent Collector Current, Icq
C8
C5
L2
R5
C6
MHz
dB dB dB dBm dBm dBm dBm V mA
700
20 12 6 +30.4 +44.1 +20.6 +22.8
750
20.1 14.5 7 +30.4 +45 +21.2 +23.6 +5 300
800
20.2 16 8.6 +30.7 +44.6 +21.4 +23.3
850
20 13.3 11.5 +30.6 +44 +21 +23.2
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. 2. EVM Test set-up: 802.16 - 2004 OFDMA, 64 QAM - 1/2, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 4 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 700-850 MHz
S21 vs. Frequency
22
T=+25C
Return Loss vs. Frequency
0
T=+25C
P1dB vs. Frequency
32
T=+25C
21
Return Loss (dB) S21 (dB)
-5
S22
P1dB (dBm)
31 30 29 28 27 600 650 700 750 800 Frequency (MHz) 850 900 700 730 760 790 Frequency (MHz) 820 850
20 19 18 17 600 650 700 750 800 Frequency (MHz) 850 900
-10 -15
S11
-20 -25
ACLR vs. Pout vs. Freq
-35
T=+25C 3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
EVM vs. Pout vs. Freq
3
T=+25C OFDM,QAM-64,54 Mb/s
OIP3 vs. Pout / tone vs. Freq
55
700 MHz 750 MHz 800 MHz 850 MHz
1 MHz tone spacing T=+25C
-40
ACLR (dBc) EVM (%)
2.5 50
700 MHz 750 MHz 800 MHz 850 MHz
OIP3 (dBm)
2 -45 -50 -55 -60 19 20 21 22 23 Pout (dBm) 24 25
700 MHz 750 MHz 800 MHz 850 MHz
1.5 1 0.5 0 19 20 21 22 Pout (dBm)
45
40
35 23 24 17 19 21 Pout / tone (dBm) 23 25
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
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AH225
1W High Linearity InGaP HBT Amplifier Application Circuit 920-960 MHz (AH225-S8PCB900)
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of L2 is placed at 170 mils from the edge of AH225 RFin pin (8.5 at 940 MHz). The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin (4 at 940 MHz). The edge of C2 is placed at 220 mils from the edge of AH225 RFout pin (11 at 940 MHz). Zero ohm jumpers may be replaced with copper traces in the target application layout. C2 location will need to be re-optimized if replaced with copper trace. DNP means Do Not Place. Inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 920-960 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 22 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq
C2
MHz
dB dB dB dBm dBm dBm dB V mA
920
19.7 9.6 8 +31.1 +46.2 +21.6 9.3
940
19.8 10.5 8.4 +31 +47.3 +21.7 9.2 +5 300
960
19.9 10.4 9 +31.1 +48 +21.6 9.3
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 6 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 920-960 MHz
S21 vs. Frequency
22 21
S21 (dB)
S11 vs. Frequency
0
-40C +25C +85C
S11 (dB)
S22 vs. Frequency
0
-40C +25C +85C -40C +25C +85C
-5
-5
S22 (dB)
20 19 18 17 920 930 940 Frequency (MHz) 950 960
-10
-10
-15
-15
-20 920 930 940 Frequency (MHz) 950 960
-20 920 930 940 Frequency (MHz) 950 960
Gain vs. Pout vs. Temp
22 21
Gain (dB)
Frequency = 940 MHz
Icc vs. Pout
600
-40C +25C +85C
Icc (mA)
3GPP WCDMA,TM164DPCH,5 MHz Offset,940 MHz T=+25C
P1dB vs. Frequency
33
T=+25C
550
P1dB (dBm)
32 31 30 29 28
500 450 400 350 300
20 19 18 17 25 26 27 28 29 Pout (dBm) 30 31 32
22
24
26 28 Pout (dBm)
30
32
920
930
940 Frequency (MHz)
950
960
ACLR vs. Pout vs. Temp
-35
3GPP WCDMA,TM1+64DPCH, 5 MHz Offset, 940 MHz
ACLR vs. Pout vs. Freq
-35
T=+25C 3GPP WCDMA, TM1+64DPCH, 5 MHz Offset
Noise Figure vs. Frequency vs. Temp
12 10
NF (dB)
-40
ACLR (dBc) ACLR (dBc)
-40
8 6 4 2
-40C +25C +85C
-45
-40C +25C +85C
-45
-50
-50
920 MHz 940 MHz 960 MHz
-55 20 21 22 23 24 Output Channel Power (dBm) 25 26
-55 20 21 22 23 24 Output Channel Power (dBm) 25 26
920
930
940 Frequency (MHz)
950
960
OIP3 vs. Pout/Tone vs. Temp
55 50
OIP3 (dBm)
1 MHz spacing, 940 MHz
OIP3 vs. Pout/Tone vs. Freq
55
1 MHz spacing T=+25C
OIP3 vs. Frequency
55
1 MHz spacing, 22 dBm / Tone Pout T=+25C
-40C +25C +85C
OIP3 (dBm)
50 45 40 35 30
920 MHz 940 MHz 960 MHz
OIP3 (dBm)
50 45 40 35 30
45 40 35 30 17 19 21 Pout / tone (dBm) 23 25
17
19
21 Pout / tone (dBm)
23
25
920
930
940 Frequency (MHz)
950
960
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
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AH225
1W High Linearity InGaP HBT Amplifier Reference Design 1475-1510 MHz
L2
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of L2 is placed against the edge of C9. The edge of C9 is placed at 75 mils from the edge of AH225 RFin pin (6 at 1490 MHz). The edge of C2 is placed at 300 mils from the edge of AH225 RFout pin (24 at 1490 MHz). Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. Inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 1475-1510 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 19 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] OFDMA Channel Power at 2.5% EVM [2] Supply Voltage, Vcc Quiescent Collector Current, Icq
C2
MHz
dB dB dB dBm dBm dBm dBm V mA
1475
17 17.5 10 +31.4 +47.6 +22 +23.9
1490
17 17.2 11 +31.3 +48 +22 +23.9 +5 300
1510
17 15.2 13 +31 +47 +21.8 +23.7
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. 2. EVM Test set-up: 802.16 - 2004 OFDMA, 64 QAM - 1/2, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 8 of 21 -
Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)
AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 1475-1510 MHz
S21 vs. Frequency
18
T=+25C
Return Loss vs. Frequency
0
T=+25C
P1dB vs. Frequency
33
T=+25C
17
Return Loss (dB) S21 (dB)
-5
P1dB (dBm)
32 31 30 29 28 1475
16 15 14 13 1400
-10 -15
S11
-20 -25 1400
S22
1450
1500 Frequency (MHz)
1550
1600
1450
1500 Frequency (MHz)
1550
1600
1485
1495 Frequency (MHz)
1505
1515
ACLR vs. Pout vs. Freq
-30
T=+25C 3GPP WCDMA,TM1+64DPCH,+5 MHz Offset
3
T=+25C
OFDM, QAM-64, 54 Mb/s, +25 C
EVM vs. Pout vs. Freq
OIP3 vs. Pout / tone vs. Freq
55
T=+25C 1 MHz Spacing
-35 -40
ACLR (dBc)
2.5
1475 MHz 1490 MHz 1510 MHz
EVM (%)
OIP3 (dBm)
2 1.5 1 0.5 0
1475 MHz 1490 MHz 1510 MHz
50 45 40 35 30
1475 MHz 1490 MHz 1510 MHz
-45 -50 -55 -60 19 20 21 22 Pout (dBm) 23 24 25
19
20
21 22 Pout (dBm)
23
24
17
19
21 Pout / tone (dBm)
23
25
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
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AH225
1W High Linearity InGaP HBT Amplifier Reference Design 1805-1880 MHz
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of C9 is placed at 10 mils from the edge of AH225 RFin pin (0.5 at 1840 MHz). The edge of L2 is placed against the edge of L5. The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin (8 at 1840 MHz). The edge of C5 is placed against the edge of C6. Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. Inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 1805-1880 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 19 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] OFDMA Channel Power at 2.5% EVM [2] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq
L2
C5
L5 C9
MHz
dB dB dB dBm dBm dBm dBm dB V mA
1805
15.1 12 9.5 +30.8 +46.2 +21.7 +23.6 5.7
1840
15.1 11 10.7 +30.7 +46 +21.6 +23.5 5.7 +5 300
1880
15.1 10 12 +30.6 +45 +21.4 +23.3 5.8
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. 2. EVM Test set-up: 802.16 - 2004 OFDMA, 64 QAM - 1/2, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 10 of 21 -
Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)
AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 1805-1880 MHz
S21 vs. Frequency
17
T=+25C
Return Loss vs. Frequency
0
T=+25C
P1dB vs. Frequency
32
T=+25C
16
Return Loss (dB) S21 (dB)
-5
P1dB (dBm)
31
S22
15 14 13 12 1700
-10 -15 -20 -25 1700
S11
30 29 28 27 1800
1750
1800 1850 1900 Frequency (MHz)
1950
2000
1750
1800 1850 1900 Frequency (MHz)
1950
2000
1820
1840 1860 Frequency (MHz)
1880
ACLR vs. Pout vs. Freq
-30
T=+25C 3GPP WCDMA, TM1+64DPCH, 5 MHz Offset
EVM vs. Pout vs. Freq
3
T=+25C OFDM, QAM-64, 54 Mb/s
OIP3 vs. Pout / tone vs. Freq
60
T=+25C 1 MHz Spacing
-35
ACLR (dBc) EVM (%)
2.5
OIP3 (dBm)
55
1880 MHz 1840 MHz 1805 MHz
-40 -45 -50 -55 -60 19 20
1880 MHz 1840 MHz 1805 MHz
2 1.5 1 0.5 0
50 45 40 35 30
1880 MHz 1840 MHz 1805 MHz
21
22 Pout (dBm)
23
24
25
19
20
21 22 Pout (dBm)
23
24
17
19
21 Pout / tone (dBm)
23
25
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
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AH225
1W High Linearity InGaP HBT Amplifier Application Circuit 1930-1990 MHz (AH225-S8PCB1960)
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of L2 is placed at 140 mils from the edge of AH225 RFin pin (14.7 1960 MHz). The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin (8.4 1960 MHz). The edge of C2 is placed at 315 mils from the edge of AH225 RFout pin (33 at 1960 MHz). The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin (8.4 at 1960 MHz). Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 1930-1990 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 19 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq
C2
MHz
dB dB dB dBm dBm dBm dB V mA
1930
15.2 16 7 +31.2 +51.3 +21.8 5.9
1960
15.4 15.4 8.3 +31.3 +53.6 +21.7 5.9 +5 300
1990
15.6 14.5 9.6 +31.1 +47.5 +21.7 6
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
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AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 1930-1990 MHz
S21 vs. Frequency
17 16
S21 (dB)
S11 vs. Frequency
0 -5 -10 -15 -20 -25 1930
S22 (dB) S11 (dB)
S22 vs. Frequency
0 -5
-40C +25C +85C
15 14 13 12 1930
-40C +25C +85C
-10 -15 -20 -25 1930
-40C +25C +85C
1940
1950 1960 1970 Frequency (MHz)
1980
1990
1940
1950 1960 1970 Frequency (MHz)
1980
1990
1940
1950 1960 1970 Frequency (MHz)
1980
1990
ACLR vs. Pout vs. Freq
-30
T=+25C 3GPP WCDMA, TM1+64DPCH, 5 MHz Offset
OIP3 vs. Pout / Tone vs. Freq
55
T=+25C 1 MHz spacing
OIP3 vs. Pout/Tone vs. Bias Voltage
60
1960 MHz, 1MHz spacing T=+25C
-35
ACLR (dBc)
OIP3 (dBm)
OIP3 (dBm)
-40 -45 -50 -55 -60 19 20
1930 MHz 1960 MHz 1990 MHz
50 45 40 35 30
1930 MHz 1960 MHz 1990 MHz
55 50 45 40 35
4.75 V 5V 5.25 V
21 22 23 Output Channel Power (dBm)
24
25
17
19
21 Pout / Tone (dBm)
23
25
17
19
21 23 Output Power/Tone (dBm)
25
ACLR vs. Pout vs Bias Voltage
-30 -35
ACLR (dBc) P1dB (dBm)
3GPPWCDMA,TM1+64DPCH,5 MHz Offset,1960 MHz T=+25C
P1dB vs. Freq vs. Bias Voltage
33
T=+25C
Total device current vs. Pout vs. Bias Voltage
450 400 350 300 250 200
4.75 V 5V 5.25 V
Total device current include Icc, Iref, Ibias, 1960 MHz T=+25C
-40 -45 -50 -55 -60 19 20 21 22 23 Pout (dBm) 24 25
4.75 V 5V 5.25 V
31 30 29 28 1930
4.75 V 5V 5.25 V
1940
1950 1960 1970 Frequency (MHz)
1980
1990
Device Current (mA)
32
19
20
21
22 Pout (dBm)
23
24
25
OIP3 vs. P1dB vs. Frequency
60
T=+25C 1 MHz spacing, 19 dBm / tone Pout
Noise Figure vs. Frequency
10 8
NF (dB) NF (dB)
Noise Figure vs. Bias Voltage
10 8 6 4 2 0 4.75
T=+25C F=1960 MHz
55
OIP3 (dBm)
50 45 40 35 1930
6 4 2 0 1930
-40C +25C +85C
1940
1950 1960 1970 Frequency (MHz)
1980
1990
1940
1950 1960 1970 Frequency (MHz)
1980
1990
4.85
4.95 5.05 Voltage (V)
5.15
5.25
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 13 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Reduced Bias Configurations Application Note
The AH225 can be configured to be operated with lower bias current by varying the Vpd resistor-R1 as highlighted on the schematic below. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR performance of the device as shown below. It is expected that variation of the bias current for other frequency applications will produce similar performance results. The data below represents data taken from the AH225S8PCB1960 with data taken at 1960 MHz.
R1 ()
56.2 82 120 200 403
Icq (mA)
500 400 300 200 100
Gain (dB)
15.6 15.4 15.2 14.8 14
Pdiss (W)
2.5 2 1.5 1 0.5
P1dB (dBm)
+30.9 +30.9 +30.9 +31.1 +31.4
OIP3 (dBm)1
+48.7 +48.7 +48.5 +43.5 +37.7
Pout (dBm)2
+21.4 +21.6 +21.4 +19.9 +15
Notes: 1. OIP3 is measured with two tones at output power of 19 dBm / tone separated by 1 MHz spacing. 2. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. Pout (Channel power) at -50 dBc ACLR is shown in the table above.
ACLR vs. Pout vs. Bias Current
-30 -35
ACLR (dBc) OIP3 (dBm)
3GPPWCDMA,TM1+64DPCH,5 MHz Offset,1960 MHz T=+25C
OIP3 vs. Pout / Tone vs. Bias Current
55
T=+25C
1960 MHz, 1 MHz spacing
P1dB vs. Current
33
T=+25C
50 45 40 35 30 19 20 21 22 Pout (dBm) 23 24 25 17 19 21 Pout / Tone (dBm) 23 25
P1dB (dBm)
32 31 30 29 28 100 200 300 Current (mA) 400 500
-40 -45 -50 -55 -60
1 00 m A 2 00 m A 3 00 m A 4 00 m A 5 00 m A
10 0 m A 20 0 m A 30 0 m A 40 0 m A 50 0 m A
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 14 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Application Circuit 2110-2170 MHz (AH225-S8PCB2140)
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of L2 is placed at 225 mils from the edge of Ah225 RFin pin (24 at 2140 MHz). The edge of C9 is placed at 80 mils from the edge of AH225 RFin pin (9 at 2140 MHz). The edge of C2 is placed at 200 mils from the edge of AH225 RFout pin (23 at 2140 MHz). The edge of C6 is placed at 80 mils from the edge of AH225 RFout pin (9 at 2140 MHz). Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. Inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 2110-2170 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 19 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] Noise Figure Supply Voltage, Vcc Quiescent Collector Current, Icq
C2
MHz
dB dB dB dBm dBm dBm dB V mA
2110
15.2 20 7.7 +31.5 +45.6 +20.9 6
2140
15.5 18 9.4 +31.2 +46 +21.3 6 +5 300
2170
15.6 17 12 +31.1 +46.1 +21 5.9
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 15 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 2110-2170 MHz
S21 vs. Frequency
17 16
S21 (dB) S11 (dB)
S11 vs. Frequency
0 -5 -10
-40C +25C +85C
0 -5
S11 (dB)
S22 vs. Frequency
-40C +25C +85C
15 14 13 12 2110
-40C +25C +85C
-10 -15 -20 -25 2110
-15 -20 -25 -30 2110
2120
2130 2140 2150 Frequency (MHz)
2160
2170
2120
2130 2140 2150 Frequency (MHz)
2160
2170
2120
2130 2140 2150 Frequency (MHz)
2160
2170
Gain vs. Pout vs. Temp
18
Freq=2140 Mhz
Icc vs. Pout
550
3GPP WCDMA, TM1+64DPCH, 5 MHz Offset, 2140 MHz
T=+25C
P1dB vs. Frequency
33
T=+25C
17
Gain (dB)
P1dB (dBm)
-40C +25C +85C
Icc (mA)
500 450 400 350 300
32 31 30 29 28 2110
16 15 14 13 25 26 27 28 29 Pout (dBm) 30 31 32
22
24
26 Pout (dBm)
28
30
2120
2130 2140 2150 Frequency (MHz)
2160
2170
ACLR vs. Pout vs. Temp
-35 -40
ACLR (dBc) ACLR (dBc)
3GPP WCDMA, TM1+64DPCH, 5 MHz Offset, 2140 MHz
ACLR vs. Pout vs. Freq
-35 -40
NF (dB)
3GPP WCDMA, TM1+64DPCH, 5 MHz Offset
Noise Figure vs. Frequency vs. Temp
10 8 6 4 2 0 2110
-40C +25C +85C
-45 -50 -55 -60 19 20 21 22 23 Output Channel Power (dBm) 24 25
-40C +25C +85C
-45 -50 -55 -60 19 20 21 22 23 Channel Output Power (dBm) 24 25
2110 MHz 2140 MHz 2170 MHz
2120
2130 2140 2150 Frequency (MHz)
2160
2170
OIP3 vs. Pout/Tone vs. Temp
55 50
OIP3 (dBm)
1 MHz spacing, 2140 MHz
OIP3 vs. Pout/Tone vs. Freq
55 50
OIP3 (dBm)
OIP3 vs. Frequency
55
1 MHz spacing, 19 dBm / Tone Pout T=+25C
1 MHz spacing 2110 MHz 2140 MHz 2170 MHz
-40C +25C +85C
50
OIP3 (dBm)
45 40 35 30 17 19 21 Pout / Tone (dBm) 23 25
45 40 35 30 17 19 21 Pout / Tone (dBm) 23 25
45 40 35 30
2110 2120 2130 2140 2150 Frequency (MHz) 2160 2170
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 16 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Reference Design 2500-2700 MHz
Notes:
1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16.
See PC Board Layout, page 20 for more information. Vref J4 turret can be used as control voltage for device power down (low = RF off) by setting R8 = 0 and R8 = no connect. The primary RF microstrip characteristic line impedance is 50 . Do not exceed +5.5V on Vpd or Vcc or TVS diode D3 will be damaged. Components shown on the silkscreen but not on the schematic are not used. The edge of C6 is placed at 75 mils from the edge of AH225 RFout pin (10.4 at 2600 MHz). C5 is placed against the edge of C6. The edge of R5 is placed at 10 mils from the edge of AH225 RFin pin (1.5 at 2600 MHz). The edge of C9 is placed at 10 mils from the edge of R5 (1.5 at 2600 MHz). L2 is placed against the edge of C9. Zero ohm jumpers may be replaced with copper traces in the target application layout. DNP means Do Not Place. The multilayer inductor L3 on Vpd line is critical for linearity performance. The locations of C11, R2, C10 and C3 are non-critical. They can be placed closer to the device. Ferrite Bead FB1 eliminates bypass line resonances between C15 and C1. Steward MI0603K300R-10. All components are of 0603 size unless stated otherwise.
Typical Performance 2500-2700 MHz
Frequency
Gain Input Return Loss Output Return Loss Output P1dB Output IP3 at 19 dBm/tone, f = 1 MHz WCDMA Channel Power at -50 dBc ACLR [1] OFDMA Channel Power at 2.5% EVM [2] Supply Voltage, Vcc Quiescent Collector Current, Icq
L2
0
C5
C9 R5
MHz
dB dB dB dBm dBm dBm dBm V mA
2500
12.9 13.3 5.2 +30.4 +50 +21.3 +23
2600
13.2 19.4 5.5 +30.5 +48.7 +21.3 +23 +5 300
2700
12.8 15.8 6.4 +30.2 +44.8 +20.9 +22.7
Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 10.2 dB at 0.01% Prob. 2. EVM Test set-up: 802.16 - 2004 OFDMA, 64 QAM - 1/2, 1024 FFT, 20 symbols, 30 sub channels.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 17 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Typical Performance Plots 2500-2700 MHz
S21 vs. Frequency
15
T=+25C
Return Loss vs. Frequency
0
T=+25C
P1dB vs. Frequency
32
T=+25C
14
Return Loss (dB) Gain (dB)
-5 -10 -15
S11
S22
P1dB (dBm)
31 30 29 28 27 2500
13 12 11 10 2400
-20 -25 2400
2500 2600 Frequency (MHz)
2700
2500 2600 Frequency (MHz)
2700
2550
2600 Frequency (MHz)
2650
2700
ACLR vs. Pout vs. Freq
-30
T=+25C 3GPP WCDMA, TM1+64DPCH, 5 MHz Offset
EVM vs. Pout vs. Freq
3
T=+25C OFDM, QAM-64, 54 Mb/s
OIP3 vs. Pout / Tone vs. Freq
55
T=+25C 1 MHz Spacing
-35
ACLR (dBc)
2.5
2500 MHz 2600 MHz 2700 MHz
OIP3 (dBm)
-40 -45 -50 -55 -60 19
2
EVM (%)
2500 MHz 2600 MHz 2700 MHz
50 45 40 35 30
2500 MHz 2600 MHz 2700 MHz
1.5 1 0.5 0
20
21
22 Pout (dBm)
23
24
25
19
20
21 22 Pout (dBm)
23
24
17
19
21 Pout / tone (dBm)
23
25
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 18 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Pin Description
Pin 1 Reference Mark Vbias N/C RF_In N/C 1 2 3 4 8 Iref 7 RF_Out 6 RF_Out 5 N/C Backside Paddle - RF/DC GND
Pin
1 2, 4, 5 3 6 7 8 Backside Paddle
Symbol
Vbias N/C RF_in RF_out RF_out Iref RF/DC GND
Description
Voltage supply for active bias. Connect to same supply voltage as Vcc. No internal connection. This pin can be grounded or N/C on PCB. RF Input. Requires matching for operation. RF Output and DC supply voltage. See pin 6. Reference current into internal active bias current mirror. Current into Iref sets device quiescent current. Also, can be used as on/off control. Use recommended via pattern shown on page 20 and ensure good solder attach for optimum thermal and electrical performance.
Application Board Information PC Board Layout
Top RF layer is .014" Getek, r = 4.0, 4 total layers (0.062" thick) for mechanical rigidity. Metal layers are 1oz copper. Microstrip line details: width = .030", spacing = .026". The silk screen markers `A', `B', `C', etc. and `1', `2', `3', etc. are used as placemarkers for the input and output tuning shunt capacitors - C8, C5 and C2. The markers and vias are spaced in .050" increments. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. For further technical www.TriQuint.com information, Refer to
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc.
- 19 of 21 -
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AH225
1W High Linearity InGaP HBT Amplifier Mechanical Information Package Information and Dimensions
This package is lead-free/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and lead (maximum 245 C reflow temperature) soldering processes. The AH225 will be marked with an "AH225G" designator with a lot code marked below the part designator. The "Y" represents the last digit of the year the part was manufactured, the "XXXX" is an autogenerated number, and "Z" refers to a wafer number in a lot batch.
Mounting Configuration
Notes: 1. A heat sink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010") or equivalent. 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heat sink. Ensure that the ground / thermal via region contact the heat sink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heat sink. 6. RF Trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc. - 20 of 21 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)
AH225
1W High Linearity InGaP HBT Amplifier Product Compliance Information ESD Information Solderability
Compatible with the latest version of J-STD-020, Lead free solder, 260. ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1C Passes 1000 V min. Human Body Model (HBM) JEDEC Standard JESD22A114-E Class IV Passes 1000 V min. Charged Device Model (CDM) JEDEC Standard JESD22C101-C This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free
MSL Rating
Level 2 at +260 C convection reflow The part is rated Moisture Sensitivity Level 2 at 260C per JEDEC standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@tqs.com For technical questions and application information: Email: sjcapplications.engineering@tqs.com Tel: Fax: +1.503.615.9000 +1.503.615.8902
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev C 10/25/10 (c) 2010 TriQuint Semiconductor, Inc. - 21 of 21 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network(R)

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